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inchange semiconductor product specification silicon npn power transistors 2SC940 description ? with to-3 package ? high current capability ? wide area of safe operation applications ? for b/w tv horizontal deflection application pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 90 v v ebo emitter-base voltage open collector 7 v i c collector current 7.5 a i cm collector current-peak 15 a p t total power dissipation t mb =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC940 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 90 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 1.5 v i cbo collector cut-off current v cb =90v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =5a ; v ce =5v 15 70 f t transition frequency i c =0.5a ; v ce =10v 20 mhz ? h fe-2 classifications o q p 15-35 25-45 35-70
inchange semiconductor product specification 3 silicon npn power transistors 2SC940 package outline fig.2 outline dimensions

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